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| S T A6620 S amHop Microelectronics C orp. Nov. 24 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 40V F E AT UR E S S uper high dense cell design for low R DS (ON). ID 7A R DS (ON) ( m ) Max 25 @ V G S = 10V 42 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. D1 8 D1 7 D2 6 D2 5 P DIP -8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol VDS VGS 25 C 70 C IDM IS PD ID Limit 40 20 7 5.9 30 1.7 3 2 Unit V V A A A A Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C W C TJ, TS TG -55 to 150 THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 41.5 C /W S T A6620 N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c Condition VGS = 0V, ID = 250uA VDS = 32V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 7A VGS =4.5V, ID= 5A VDS = 5V, VGS = 10V VDS = 5V, ID = 7A Min Typ C Max Unit 40 1 10 1 2 OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage V uA nA V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 3 25 42 19 28 15 13 710 110 68 16.5 14 40 6.5 VDS =20V, ID =7A,VGS =10V VDS =20V, ID =7A,VGS =4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =20V, ID = 7 A VGS =4.5V 2 A S DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =25V, VGS = 0V f =1.0MHZ PF PF PF S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg VDD = 20V ID = 1 A VGS = 10V R GE N = 3.3 ohm ns ns ns ns nC nC nC nC 13.3 6.7 2 3.7 S T A6620 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =1.7A Min Typ Max Unit 0.8 1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 20 V G S =10V V G S =5V 16 16 V G S =4.5V V G S =4V ID, Drain C urrent(A) 12 ID, Drain C urrent (A) 12 T j=125 C 8 -55 C 4 0 0.0 25 C 8 4 V G S =3.5V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 1 2 3 4 5 6 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 60 1.75 F igure 2. Trans fer C haracteris tics R DS (ON), On-R es is tance Normalized 50 1.60 1.45 1.30 1.15 1.00 0.85 V G S =10V ID=7A R DS (on) (m ) 40 V G S =4.5V 30 20 V G S =10V 10 1 V G S =4.5V ID=5A 1 4 8 12 16 20 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature S T A6620 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.20 ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 60 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 ID=7A Is , S ource-drain current (A) 50 R DS (on) (m ) 125 C 40 75 C 30 20 10 0 25 C 10.0 5.0 125 C 25 C 75 C 1.0 0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 1.5 V G S , G ate-S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T A6620 V G S , G ate to S ource V oltage (V ) 1200 1000 10 8 6 4 2 0 VDS =20V ID=7A C , C apacitance (pF ) 800 600 400 200 0 0 C rs s 5 10 15 C os s C is s 6 20 25 30 0 2 4 6 8 10 12 14 16 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 250 S witching T ime (ns ) ID, Drain C urrent (A) Tr 50 30 10 RD ) ON L im it 10 ms 100 60 10 S ( TD(off) TD(on) Tf 10 0m s 1 1s DC V DS =20V ,ID=7A 0.1 0.03 1 1 V G S =10V VGS =10V S ingle P ulse T A=25 C 0.1 1 10 40 6 10 60 100 300 600 R g, G ate R es is tance () V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics 9 F igure 12. Maximum S afe O perating Area Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM t1 t2 1. 2. 3. 4. R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 STA6620 PACKAGE OUTLINE DIMENSIONS PDIP 8 SYMBOL A A1 A2 b c b2 b3 L e D D1 E E1 eA eB MIN .145 .020 .125 .015 .009 .045 .030 .125 .090 .373 .030 .300 .245 .280 .310 INCHES NOM .172 .130 .018 .012 .060 .039 .132 .100 .386 .045 .310 .250 .325 MAX .200 .135 .021 .014 .070 .045 .140 .110 .400 .060 .320 .255 .365 MIN 3.68 0.51 3.18 0.38 0.23 1.14 0.76 3.18 2.29 9.47 0.76 7.62 6.22 7.11 7.87 MILLIMETERS NOM MAX 4.37 5.08 3.30 3.43 0.46 0.53 0.30 0.36 1.52 1.78 0.99 1.14 3.35 3.56 2.54 2.79 9.80 10.16 1.14 1.52 7.87 8.13 6.35 6.48 8.26 9.27 6 |
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